High-voltage transistor assembly
Transistor assembly K1NT661A, consisting of four silicon epitaxial-planar n-p-n switching high-frequency low-power transistors.
Designed for use in switching circuits. High-voltage.
It is available in a metal-ceramic case with flexible terminals.
The type designation is given on the case.
The assembly weight is not more than 0.4 g.
– Maximum collector-base voltage at a given reverse collector current and open emitter circuit (Ucbo max), V: 300
– The maximum collector-emitter voltage at a given collector current and a given sopr. in the b-e circuit.(Ucr max),In: 250
– The maximum collector-emitter voltage at a given collector current and open base circuit (Uceo max), In:
– Maximum allowable collector current (Ic max,A): 0.005
– Static current transfer coefficient h21e min: 5
– The boundary frequency of the current transfer coefficient fgr, MHz:
– Maximum dissipated collector power (Rc, W): 0.1
It is convenient to use for controlling gas discharge indicators.
